HXY MOSFET NVHL040N65S3HF-HXY

Manufacturer	HXY MOSFETAsian Brands
MPN	NVHL040N65S3HF-HXY
LCSC Part #	C48972067
Packaging	TO-247
Customer #
Key Attributes	SiC Power MOSFET N-Channel Enhancement Mode
Datasheet	HXY MOSFET NVHL040N65S3HF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	49A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	49mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel

In-Stock: 30

30 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 7.2151$ 6.1329	$ 6.13
10+	$ 6.2248$ 5.2911	$ 52.91
30+	$ 5.6209$ 4.7778	$ 143.33
90+	$ 5.1151$ 4.3479	$ 391.31
Standard Packaging30/Full Tube

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-247
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	49A
Output Capacitance(Coss)	190pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	4V
Pd - Power Dissipation	242W
RDS(on)	49mΩ
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	1 N-channel
Input Capacitance(Ciss)	1.823nF
Gate Charge(Qg)	96nC
Type	N-Channel