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R+O HB10N200S

Manufacturer
R+OAsian Brands
MPN
HB10N200S
LCSC Part #
C48971732
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 45A TO-252
DatasheetR+O HB10N200S
RoHS Compliance1 documents available
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingTO-252
Drain to Source Voltage100V
Configuration-
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)45A
Output Capacitance(Coss)540pF
Ciss-Input Capacitance1.02nF
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss)40pF
RDS(on)14mΩ@10V
Number1 N-channel
Gate Charge(Qg)12.7nC@10V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel
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Introduction

AI Translation

This N+P channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100 V
  • Drain Current (ID) = 45 A
  • On-Resistance (RDS(on)) < 20 mΩ at VGS = 10 V
  • Super Junction Trench (SGT) technology
  • Avalanche energy tested
  • Fast switching speed

Applications

AI Translation
  • Battery protection
  • Load switch
  • Power management