Slkor FDN335N-SL
| Manufacturer | SlkorAsian Brands |
| MPN | FDN335N-SL |
| LCSC Part # | C48971103 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1.7A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 100mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- High-density cell design achieving ultra-low on-resistance R<sub>DS(on)</sub>
- Excellent on-resistance and maximum DC current carrying capability
- Lead-free and halogen-free device
Applications
AI Translation
- DC-DC Converter
- Load Switch
In-Stock: 2,950
2,950 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0396 | $ 0.40 |
| 100+ | $ 0.0315 | $ 3.15 |
| 300+ | $ 0.0275 | $ 8.25 |
| 3,000+ | $ 0.0224 | $ 67.20 |
| 6,000+ | $ 0.02 | $ 120.00 |
| 9,000+ | $ 0.0188 | $ 169.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 100mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 5nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- High-density cell design achieving ultra-low on-resistance R<sub>DS(on)</sub>
- Excellent on-resistance and maximum DC current carrying capability
- Lead-free and halogen-free device
Applications
AI Translation
- DC-DC Converter
- Load Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



