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DOINGTER DOZ70N04TRoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ70N04T
LCSC Part #
C48934545
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET N-CH 40V 70A DFN3x3-8
Datasheetpdf iconDOINGTER DOZ70N04T
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.1973$ 0.99
50+$ 0.1605$ 8.03
150+$ 0.1447$ 21.71
500+$ 0.125$ 62.50
2,500+$ 0.1162$ 290.50
5,000+$ 0.1109$ 554.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8
Drain to Source Voltage40V
Output Capacitance(Coss)525.6pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation54W
RDS(on)4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)39.1pF
Number1 N-channel
Input Capacitance(Ciss)1.824nF
Gate Charge(Qg)24.1nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-source voltage (VDS) = 40 V, drain current (ID) = 70 A, on-resistance (RDS(ON)) < 4 mΩ (typical: 3 mΩ) at gate-source voltage (VGS) = 10 V
  • Low gate charge.
  • RoHS-compliant devices available.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package thermal dissipation performance.