HXY MOSFET 3DD13003

Manufacturer	HXY MOSFETAsian Brands
MPN	3DD13003
LCSC Part #	C48913149
Packaging	TO-252-2L
Customer #
Key Attributes	500V 30 1.5A 1 NPN NPN TO-252-2L Single Bipolar Transistors RoHS
Datasheet	HXY MOSFET 3DD13003

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Current - Collector Cutoff	500uA
Transition frequency(fT)	5MHz
Collector - Emitter Voltage VCEO	500V
DC Current Gain	30
Emitter-Base Voltage VEBO	9V
Current - Collector(Ic)	1.5A
Pd - Power Dissipation	1.25W
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	500mV
Operating Temperature	-55℃~+150℃

In-Stock: 115

115 In stock, ships now

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Qty	Unit Price	Total Amount
5+	$ 0.1031	$ 0.52
50+	$ 0.0821	$ 4.11
150+	$ 0.0716	$ 10.74
500+	$ 0.0638	$ 31.90
2,500+	$ 0.0575	$ 143.75
5,000+	$ 0.0543	$ 271.50
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Current - Collector Cutoff	500uA
Transition frequency(fT)	5MHz
Collector - Emitter Voltage VCEO	500V
DC Current Gain	30
Emitter-Base Voltage VEBO	9V
Current - Collector(Ic)	1.5A
Pd - Power Dissipation	1.25W
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	500mV
Operating Temperature	-55℃~+150℃