TECH PUBLIC SI4431CDY-TP
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | SI4431CDY-TP |
| LCSC Part # | C48639033 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 8A SOP-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| Output Capacitance(Coss) | 111pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 5W | |
| RDS(on) | 22mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 890pF | |
| Gate Charge(Qg) | 15nC@15V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance RDS(on) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS): -30V
- Drain-Source Current (IDS): -8A
- On-Resistance (RDS(ON)) (at VGS = -10V) < 29mΩ
Applications
AI Translation
- Reverse battery protection
- Load switch
- Power management
- PWM applications
In-Stock: 3,075
3,075 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1423$ 0.1352 | $ 0.68 |
| 50+ | $ 0.1125$ 0.1069 | $ 5.35 |
| 150+ | $ 0.0976$ 0.0928 | $ 13.92 |
| 500+ | $ 0.0864$ 0.0821 | $ 41.05 |
| 3,000+ | $ 0.0775$ 0.0737 | $ 221.10 |
| 6,000+ | $ 0.073$ 0.0694 | $ 416.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 8A | |
| Output Capacitance(Coss) | 111pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 5W | |
| RDS(on) | 22mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 890pF | |
| Gate Charge(Qg) | 15nC@15V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance RDS(on) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS): -30V
- Drain-Source Current (IDS): -8A
- On-Resistance (RDS(ON)) (at VGS = -10V) < 29mΩ
Applications
AI Translation
- Reverse battery protection
- Load switch
- Power management
- PWM applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



