LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
10% OFF
Tokmas SI7149ADP-T1-GE3(TOKMAS) product image
  • SI7149ADP-T1-GE3(TOKMAS) thumbnail 1
  • SI7149ADP-T1-GE3(TOKMAS) thumbnail 2
  • SI7149ADP-T1-GE3(TOKMAS) thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Tokmas SI7149ADP-T1-GE3(TOKMAS)RoHS

Manufacturer
TokmasAsian Brands
MPN
SI7149ADP-T1-GE3(TOKMAS)
LCSC Part #
C48586474
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET P-CH 30V 105A DFN-8(5x6)
Datasheetpdf iconTokmas SI7149ADP-T1-GE3(TOKMAS)
In-Stock: 627
627 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4189$ 0.3771$ 0.38
10+$ 0.326$ 0.2934$ 2.93
30+$ 0.2869$ 0.2583$ 7.75
100+$ 0.238$ 0.2142$ 21.42
500+$ 0.2152$ 0.1937$ 96.85
1,000+$ 0.2022$ 0.1820$ 182.00
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTokmas
PackagingDFN-8(5x6)
Drain to Source Voltage30V
Current - Continuous Drain(Id)105A
Output Capacitance(Coss)723pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)5.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.968nF
Gate Charge(Qg)183nC@10V
TypeP-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This P-channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = -30 V, ID = -105 A, RDS(ON) < 5.5 mΩ at VGS = -10 V
  • Low gate charge.
  • Available in eco-friendly devices.
  • Advanced high cell density trench technology for ultra-low RDS(ON).
  • Excellent package with superior thermal performance.