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Tokmas BSC059N04LS6(TOKMAS)RoHS

Manufacturer
TokmasAsian Brands
MPN
BSC059N04LS6(TOKMAS)
LCSC Part #
C48586465
Packaging
DFN-8(5x6)
Customer #
Key Attributes
MOSFET N-CH 40V 60A DFN-8(5x6)
Datasheetpdf iconTokmas BSC059N04LS6(TOKMAS)
In-Stock: 4,110
4,110 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2371$ 1.19
50+$ 0.2046$ 10.23
150+$ 0.1907$ 28.61
500+$ 0.1764$ 88.20
2,500+$ 0.1686$ 421.50
5,000+$ 0.164$ 820.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTokmas
PackagingDFN-8(5x6)
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)626.8pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)29.4pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)997.5pF
Gate Charge(Qg)17nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 40 V, ID = 60 A, RDS(ON) < 5 mΩ at VGS = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Thermally enhanced package