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Tokmas BSC059N04LS6(TOKMAS)
| Manufacturer | TokmasAsian Brands |
| MPN | BSC059N04LS6(TOKMAS) |
| LCSC Part # | C48586465 |
| Packaging | DFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 60A DFN-8(5x6) |
| Datasheet | Tokmas BSC059N04LS6(TOKMAS) |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 7 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 626.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29.4pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997.5pF | |
| Gate Charge(Qg) | 17nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 626.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29.4pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997.5pF | |
| Gate Charge(Qg) | 17nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 40 V, ID = 60 A, RDS(ON) < 5 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 3,900
3,900 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2376 | $ 1.19 |
| 50+ | $ 0.205 | $ 10.25 |
| 150+ | $ 0.1911 | $ 28.67 |
| 500+ | $ 0.1768 | $ 88.40 |
| 2,500+ | $ 0.169 | $ 422.50 |
| 5,000+ | $ 0.1644 | $ 822.00 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 626.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29.4pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997.5pF | |
| Gate Charge(Qg) | 17nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Tokmas | |
| Packaging | DFN-8(5x6) | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Output Capacitance(Coss) | 626.8pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 44W | |
| Reverse Transfer Capacitance (Crss@Vds) | 29.4pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997.5pF | |
| Gate Charge(Qg) | 17nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 40 V, ID = 60 A, RDS(ON) < 5 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
C48586465 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CI011N04 | Tokmas | PDFN5x6-8L | 120 | $ 0.4213 | ||
| CSD18540Q5B(TOKMAS) | Tokmas | DFN-8(5x6) | 1 | $ 0.9081 | ||
| FDMS86101(TOKMAS) | Tokmas | DFN-8(5x6) | 103 | $0.4608 $0.512 | ||
| BSC093N15NS5(TOKMAS) | Tokmas | DFN-8(5x6) | 30 | $ 1.0648 | ||
| CSD18534Q5A(TOKMAS) | Tokmas | DFN-8(5x6) | 45 | $0.2354 $0.2615 | ||
| NTMFS5C628NLT1G(TOKMAS) | Tokmas | DFN-8(5x6) | 0 | $ 0.4965 | ||
| BSC030N08NS5(TOKMAS) | Tokmas | DFN-8(5x6) | 0 | $0.7964 $0.8656 |