TECH PUBLIC FDV301N-TP
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | FDV301N-TP |
| LCSC Part # | C48543190 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET 25V 0.9A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 16pF | |
| Current - Continuous Drain(Id) | 900mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 850mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 1.05Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 2.5nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- ESD protection gate, typical 6kV (HBM)
Applications
AI Translation
- Interface switches
- Load switches
- Portable device and battery DC/DC converters
In-Stock: 6,595
6,595 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0841 | $ 0.42 |
| 50+ | $ 0.0673 | $ 3.37 |
| 150+ | $ 0.0588 | $ 8.82 |
| 500+ | $ 0.0525 | $ 26.25 |
| 3,000+ | $ 0.0475 | $ 142.50 |
| 6,000+ | $ 0.0449 | $ 269.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 16pF | |
| Current - Continuous Drain(Id) | 900mA | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 850mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | |
| RDS(on) | 1.05Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | 2.5nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- ESD protection gate, typical 6kV (HBM)
Applications
AI Translation
- Interface switches
- Load switches
- Portable device and battery DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



