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WXNSIC XJNG0461 product image
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WXNSIC XJNG0461RoHS

Manufacturer
WXNSICAsian Brands
MPN
XJNG0461
LCSC Part #
C48542890
Packaging
SOP-16
Customer #
Key Attributes
Three-phase PMOS+NMOS half-bridge driver chip with LDO
Datasheetpdf iconWXNSIC XJNG0461
In-Stock: 330
330 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1758$ 0.1671$ 0.84
50+$ 0.1381$ 0.1312$ 6.56
150+$ 0.1219$ 0.1159$ 17.39
500+$ 0.1017$ 0.0967$ 48.35
2,500+$ 0.0927$ 0.0881$ 220.25
4,000+$ 0.0873$ 0.0830$ 332.00
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerWXNSIC
PackagingSOP-16
Input Logic Level - Low-
Low Level Delay Time-
High Level Delay Time-
Quiescent Current500uA
Input Logic Level - High-
Operating Temperature-40℃~+125℃
Voltage - Supply5V~28V
Driven ConfigurationHalf-Bridge;Three Phase
Current - Output Low(IOL)300mA
Rise Time300ns
Fall Time60ns
Current - Output High(IOH)50mA
FeaturesUnder Voltage Protection;Dead-time control;Overtemperature protection (OTP);Interleaved conduction protection
Load TypeMOSFET

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

XJNG0461 is a three-phase high-speed power MOSFET driver with 6 channels and a maximum operating voltage of 40V. Fabricated using a high-voltage compatible process, the device integrates both high-side and low-side gate drive circuits on a single chip, with each phase featuring two input signals and two output signals for both the high-side and low-side. The logic inputs are compatible with standard CMOS or LSTTL levels, with input logic levels as low as 3.3V. The device provides a 10V gate-to-source voltage for both PMOS and NMOS, and incorporates a built-in dead-time function to prevent shoot-through between the high-side and low-side PMOS and NMOS within the same phase. To simplify PCB design, the XJNG0461 integrates a 5V/40mA LDO that can be used to supply power to an MCU or other devices. In addition, a thermal shutdown protection function is integrated for safety purposes.

Features

AI Translation
  • P/N MOS half-bridge three-phase output
  • Operating voltage up to 40 V
  • Compatible with 3.3 V, 5 V, and 15 V input logic
  • dv/dt immunity up to ±50 V/ns
  • P/N MOS |VGS| up to 10 V
  • Integrated 5 V/40 mA LDO
  • Integrated over-temperature protection
  • Gate drive voltage range: 5 V to 40 V
  • Wide operating temperature range: -40~125°C
  • Cross-conduction prevention logic
  • Integrated 130 ns dead time
  • Turn-on/turn-off propagation delay: Ton/Toff = 80 ns/30 ns
  • High-side and low-side delay matched
  • Drive current capability: source/sink = 50 mA/300 mA
  • Integrated UVLO circuit
  • UVLO rising threshold: 4.5 V
  • UVLO falling threshold: 4.3 V
  • RoHS compliant
  • SOP16 package

Applications

AI Translation
  • Medium/small power motor drives
  • Power MOSFET drives
  • Half-bridge/full-bridge power converters
  • Complementary drive converters