KIOXIA TC58NYG0S3HBAI6

The TC58NYG0S3HBAI6 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM; organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The TC58NYG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed, making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

• Organization x8 Memory cell array 2176 x 64K x 8
• Register 2176 x 8
• Page size 2176 bytes
• Block size (128K + 8K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
• Mode control Serial input/output Command control
• Number of valid blocks Min 1004 blocks Max 1024 blocks
• Power supply VCC = 1.7V to 1.95V
• Access time Cell array to register 25 μs max
• Read Cycle Time 25 ns min (CL = 30 pF)
• Program/Erase time Auto Page Program 300 μs/page typ.
• Auto Block Erase 3.5 ms/block typ.
• Operating current Read (25 ns cycle) 30 mA max
• Program (avg.) 30 mA max
• Erase (avg.) 30 mA max
• Standby 50 μA max
• Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
• 8 bit ECC for each 512Byte is required.

• solid-state file storage
• voice recording
• image file memory for still cameras
• other systems which require high-density non-volatile memory data storage