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onsemi FDC5614PRoHS

Manufacturer
onsemi
MPN
FDC5614P
LCSC Part #
C48167
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET P-CH 60V 3A SuperSOT-6
Datasheetpdf icononsemi FDC5614P
In-Stock: 6,555
6,555 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2889$ 1.44
50+$ 0.2264$ 11.32
150+$ 0.1997$ 29.96
500+$ 0.1663$ 83.15
3,000+$ 0.1514$ 454.20
6,000+$ 0.1425$ 855.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSuperSOT-6
Drain to Source Voltage60V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)105mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)759pF
Gate Charge(Qg)15nC
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Features

AI Translation
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)

Applications

AI Translation
  • DC-DC converters
  • Load switch
  • Power management