VBsemi Elec VBL1154N
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | VBL1154N |
| LCSC Part # | C480983 |
| Packaging | TO-263(D2PAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 45A TO-263(D2PAK) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 290pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Junction temperature 175 °C
- New low thermal resistance package
- PWM optimized
- RoHS compliant with directive 2002/95/EC
Applications
AI Translation
- Primary-side switch
- N-channel MOSFET
In-Stock: 80
80 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7999 | $ 1.80 |
| 10+ | $ 1.5329 | $ 15.33 |
| 50+ | $ 1.2764 | $ 63.82 |
| 100+ | $ 1.1059 | $ 110.59 |
| 500+ | $ 1.0275 | $ 513.75 |
| 1,000+ | $ 0.9943 | $ 994.30 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 290pF | |
| Current - Continuous Drain(Id) | 45A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 6V | |
| Pd - Power Dissipation | 3.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 60nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Junction temperature 175 °C
- New low thermal resistance package
- PWM optimized
- RoHS compliant with directive 2002/95/EC
Applications
AI Translation
- Primary-side switch
- N-channel MOSFET
C480983 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



