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VBsemi Elec VBA1203M product image
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VBsemi Elec VBA1203MRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
VBA1203M
LCSC Part #
C480924
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 200V 3A SO-8
Datasheetpdf iconVBsemi Elec VBA1203M
In-Stock: 1,891
1,891 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.4017$ 0.3415$ 0.34
10+$ 0.3534$ 0.3004$ 3.00
30+$ 0.3332$ 0.2833$ 8.50
100+$ 0.3083$ 0.2621$ 26.21
500+$ 0.2958$ 0.2515$ 125.75
1,000+$ 0.2896$ 0.2462$ 246.20
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSO-8
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • Junction temperature 175 °C
  • PWM optimized
  • 100% Rg tested
  • RoHS compliant with directive 2002/95/EC

Applications

AI Translation
  • Primary-side switch