VBsemi Elec FDS6690A-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDS6690A-VB |
| LCSC Part # | C47993912 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 13A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Applications
AI Translation
- Notebook CPU core - High-end switching
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3399$ 0.3230 | $ 1.62 |
| 50+ | $ 0.2669$ 0.2536 | $ 12.68 |
| 150+ | $ 0.2357$ 0.2240 | $ 33.60 |
| 500+ | $ 0.1966$ 0.1868 | $ 93.40 |
| 2,500+ | $ 0.1792$ 0.1703 | $ 425.75 |
| 4,000+ | $ 0.1688$ 0.1604 | $ 641.60 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 165pF | |
| Current - Continuous Drain(Id) | 13A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 4.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF | |
| RDS(on) | 11mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 800pF | |
| Gate Charge(Qg) | 15nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free
- Trench power MOSFET
- Optimized for high-side synchronous rectifier operation
- 100% Rg tested
- 100% UIS tested
Applications
AI Translation
- Notebook CPU core - High-end switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



