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Nexperia PMDXB600UNELZ product image
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Nexperia PMDXB600UNELZRoHS

Manufacturer
Nexperia
MPN
PMDXB600UNELZ
LCSC Part #
C478119
Packaging
DFN1010B-6
Customer #
Key Attributes
600mA 265mW 470mΩ@4.5V 450mV 2 N-Channel DFN1010B-6 FET, MOSFET Arrays RoHS
Datasheetpdf iconNexperia PMDXB600UNELZ
In-Stock: 9,665
9,665 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.3869$ 1.93
50+$ 0.3044$ 15.22
150+$ 0.2704$ 40.56
500+$ 0.2267$ 113.35
2,500+$ 0.2073$ 518.25
5,000+$ 0.1943$ 971.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerNexperia
PackagingDFN1010B-6
Current - Continuous Drain(Id)600mA
Pd - Power Dissipation265mW
RDS(on)470mΩ@4.5V
Gate Threshold Voltage (Vgs(th))450mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number2 N-Channel
Input Capacitance(Ciss)21.3pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

Dual N-channel enhancement-mode FET using trench MOSFET technology, housed in a leadless ultra-compact DFN1010B-6 (SOT1216) SMD plastic package.

Features

AI Translation
  • Low leakage current
  • Leadless ultra-small ultra-thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal performance
  • ESD protection >1 kV HBM
  • Drain-source on-state resistance RDSon = 470 mΩ

Applications

AI Translation
  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuit