Nexperia PMDPB30XN,115
| Manufacturer | |
| MPN | PMDPB30XN,115 |
| LCSC Part # | C478009 |
| Packaging | DFN2020-6(2x2) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 20V 4A DFN2020-6(2x2) |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN2020-6(2x2) | |
| Current - Continuous Drain(Id) | 4A | |
| Pd - Power Dissipation | 490mW | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 87pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN2020-6(2x2) | |
| Current - Continuous Drain(Id) | 4A | |
| Pd - Power Dissipation | 490mW | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 87pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2×2×0.65 mm
- Exposed drain pad for excellent thermal conduction
Applications
AI Translation
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
In-Stock: 105
105 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4371 | $ 0.44 |
| 10+ | $ 0.3449 | $ 3.45 |
| 30+ | $ 0.3044 | $ 9.13 |
| 100+ | $ 0.2558 | $ 25.58 |
| 500+ | $ 0.2332 | $ 116.60 |
| 1,000+ | $ 0.2202 | $ 220.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN2020-6(2x2) | |
| Current - Continuous Drain(Id) | 4A | |
| Pd - Power Dissipation | 490mW | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 87pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | Nexperia | |
| Packaging | DFN2020-6(2x2) | |
| Current - Continuous Drain(Id) | 4A | |
| Pd - Power Dissipation | 490mW | |
| RDS(on) | 40mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 660pF | |
| Gate Charge(Qg) | 14.4nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 87pF |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2×2×0.65 mm
- Exposed drain pad for excellent thermal conduction
Applications
AI Translation
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
C478009 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



