Nexperia PMV250EPEAR
| Manufacturer | |
| MPN | PMV250EPEAR |
| LCSC Part # | C477997 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 1.5A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 240mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- 1 kV ESD protected
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
In-Stock: 35,770
35,770 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3205 | $ 1.60 |
| 50+ | $ 0.2513 | $ 12.57 |
| 150+ | $ 0.2216 | $ 33.24 |
| 500+ | $ 0.1845 | $ 92.25 |
| 3,000+ | $ 0.168 | $ 504.00 |
| 6,000+ | $ 0.1581 | $ 948.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 890mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 240mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
- 1 kV ESD protected
- AEC-Q101 qualified
Applications
AI Translation
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



