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onsemi FDD86102RoHS

Manufacturer
onsemi
MPN
FDD86102
LCSC Part #
C47711
Packaging
DPAK(TO-252)
Customer #
Key Attributes
MOSFET N-CH 100V 36A DPAK(TO-252)
Datasheetpdf icononsemi FDD86102
In-Stock: 295
295 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0733$ 1.07
10+$ 0.9074$ 9.07
30+$ 0.8245$ 24.74
100+$ 0.7415$ 74.15
500+$ 0.6928$ 346.40
1,000+$ 0.6667$ 666.70
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK(TO-252)
Drain to Source Voltage100V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.035nF
Gate Charge(Qg)19nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using an advanced PowerTrench process with integrated shield gate technology. The process is optimized for on-resistance (rDS(on)), switching performance, and durability.

Features

AI Translation
  • Shielded gate MOSFET technology
  • Maximum rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
  • Maximum rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
  • High-performance trench technology for ultra-low rDS(on)
  • High power and current handling capability in widely used SMT packages
  • Extremely low Qg and Qgd compared to other trench technologies
  • Fast switching speed
  • 100% tested for unclamped inductive load (UIS)
  • RoHS compliant

Applications

AI Translation
  • DC-DC conversion