HL S160N06HG
| Manufacturer | HLAsian Brands |
| MPN | S160N06HG |
| LCSC Part # | C47665717 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET 60V 160A TO-263 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.053nF | |
| Current - Continuous Drain(Id) | 160A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.07nF | |
| Gate Charge(Qg) | 68nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
In-Stock: 370
370 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5502$ 0.5227 | $ 0.52 |
| 10+ | $ 0.433$ 0.4114 | $ 4.11 |
| 30+ | $ 0.3825$ 0.3634 | $ 10.90 |
| 100+ | $ 0.319$ 0.3031 | $ 30.31 |
| 500+ | $ 0.2914$ 0.2769 | $ 138.45 |
| 800+ | $ 0.2735$ 0.2599 | $ 207.92 |
Standard Packaging800/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.053nF | |
| Current - Continuous Drain(Id) | 160A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 96W | |
| RDS(on) | 3mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.07nF | |
| Gate Charge(Qg) | 68nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



