HXY MOSFET SI2302-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	48pF
Current - Continuous Drain(Id)	2.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	750mV
Pd - Power Dissipation	900mW
Reverse Transfer Capacitance (Crss@Vds)	27pF
RDS(on)	48mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	260pF
Gate Charge(Qg)	2.9nC@4.5V
Type	N-Channel

In-Stock: 520,700

520,700 In stock, ships now

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Qty	Unit Price	Total Amount
100+	$ 0.0142	$ 1.42
1,000+	$ 0.0116	$ 11.60
3,000+	$ 0.0087	$ 26.10
9,000+	$ 0.0079	$ 71.10
51,000+	$ 0.0071	$ 362.10
99,000+	$ 0.0067	$ 663.30
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	48pF
Current - Continuous Drain(Id)	2.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	750mV
Pd - Power Dissipation	900mW
Reverse Transfer Capacitance (Crss@Vds)	27pF
RDS(on)	48mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	260pF
Gate Charge(Qg)	2.9nC@4.5V
Type	N-Channel