TI CSD16570Q5B
| Manufacturer | |
| MPN | CSD16570Q5B |
| LCSC Part # | C473359 |
| Packaging | SON-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 25V 100A SON-8(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | SON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 1.66nF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 996pF | |
| RDS(on) | 0.49mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.7nF | |
| Gate Charge(Qg) | 192nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 25V, 0.49mΩ, SON 5mm × 6mm NexFET power MOSFET is designed to minimize resistance in ORing and hot-swap applications and is not intended for switching applications.
Features
AI Translation
- Ultra-low resistance
- Low Qg and Qgd
- Low thermal resistance
- Avalanche-rated
- Lead-free lead finish
- RoHS compliant
- Halogen-free
- SON 5mm × 6mm plastic package
Applications
AI Translation
- ORing and hot-plug applications
In-Stock: 69
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8143 | $ 0.81 |
| 10+ | $ 0.7948 | $ 7.95 |
| 30+ | $ 0.7834 | $ 23.50 |
| 100+ | $ 0.7703 | $ 77.03 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | SON-8(5x6) | |
| Drain to Source Voltage | 25V | |
| Output Capacitance(Coss) | 1.66nF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 195W | |
| Reverse Transfer Capacitance (Crss@Vds) | 996pF | |
| RDS(on) | 0.49mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 10.7nF | |
| Gate Charge(Qg) | 192nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This 25V, 0.49mΩ, SON 5mm × 6mm NexFET power MOSFET is designed to minimize resistance in ORing and hot-swap applications and is not intended for switching applications.
Features
AI Translation
- Ultra-low resistance
- Low Qg and Qgd
- Low thermal resistance
- Avalanche-rated
- Lead-free lead finish
- RoHS compliant
- Halogen-free
- SON 5mm × 6mm plastic package
Applications
AI Translation
- ORing and hot-plug applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



