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HTCSEMI HT19N1200ADZRoHS

Manufacturer
HTCSEMIAsian Brands
MPN
HT19N1200ADZ
LCSC Part #
C47326417
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
Datasheetpdf iconHTCSEMI HT19N1200ADZ
In-Stock: 1
1 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.4305$ 1.7014$ 1.70
10+$ 2.0665$ 1.4466$ 14.47
30+$ 1.8384$ 1.2869$ 38.61
90+$ 1.6058$ 1.1241$ 101.17
510+$ 1.5$ 1.0500$ 535.50
990+$ 1.4547$ 1.0183$ 1008.12
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHTCSEMI
PackagingTO-247-3
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)19A
Output Capacitance(Coss)55pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)196mΩ
Number1 N-channel
Input Capacitance(Ciss)606pF
Gate Charge(Qg)40nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • High blocking voltage with low on-resistance
  • High-speed switching and low capacitance
  • Easy paralleling and simple gate drive
  • Avalanche ruggedness
  • Latch-up immune
  • Halogen-free, RoHS compliant

Applications

AI Translation
  • Solar inverters
  • Switched-mode power supplies
  • High-voltage DC/DC converters
  • LED lighting power supplies