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HTCSEMI HT36N1200ADZRoHS

Manufacturer
HTCSEMIAsian Brands
MPN
HT36N1200ADZ
LCSC Part #
C47326416
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Datasheetpdf iconHTCSEMI HT36N1200ADZ
In-Stock: 14
14 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.1375$ 2.1963$ 2.20
10+$ 2.6919$ 1.8844$ 18.84
30+$ 2.4275$ 1.6993$ 50.98
90+$ 2.1601$ 1.5121$ 136.09
510+$ 2.0363$ 1.4255$ 727.01
990+$ 1.9804$ 1.3863$ 1372.44
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHTCSEMI
PackagingTO-247-3
Drain to Source Voltage1.2kV
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation192W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)98mΩ
Number1 N-channel
Input Capacitance(Ciss)1.13nF
Gate Charge(Qg)71nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitance
  • Easy paralleling and simple gate drive
  • Avalanche ruggedness
  • Halogen-free, RoHS compliant

Applications

AI Translation
  • Solar inverters
  • Switching power supplies
  • High-voltage DC/DC converters
  • Battery chargers
  • Motor drives