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HTCSEMI HT63N1200ADZRoHS

Manufacturer
HTCSEMIAsian Brands
MPN
HT63N1200ADZ
LCSC Part #
C47326414
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET, N-Channel Enhancement Mode
Datasheetpdf iconHTCSEMI HT63N1200ADZ
In-Stock: 30
30 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 8.3791$ 5.8654$ 5.87
10+$ 7.2296$ 5.0608$ 50.61
30+$ 6.5287$ 4.5701$ 137.10
90+$ 5.9411$ 4.1588$ 374.29
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHTCSEMI
PackagingTO-247-3
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)63A
Output Capacitance(Coss)129pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation283W
RDS(on)43mΩ
Reverse Transfer Capacitance (Crss@Vds)8pF
Number1 N-channel
Input Capacitance(Ciss)3.357nF
Gate Charge(Qg)114nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

N-channel enhancement-mode silicon carbide power MOSFET utilizing 3rd-generation SiC MOSFET technology, featuring high blocking voltage and low on-resistance, high-speed switching with low parasitic capacitance, integrated fast body diode with low reverse recovery charge, halogen-free and RoHS compliant.

Features

AI Translation
  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low on-resistance
  • High-speed switching with low parasitic capacitance
  • Fast body diode with low reverse recovery charge
  • Halogen-free, RoHS compliant

Applications

AI Translation
  • Solar inverters
  • Electric vehicle motor drives
  • High-voltage DC/DC converters
  • Switch-mode power supplies