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HTCSEMI HT63N1200AKZ
| Manufacturer | HTCSEMIAsian Brands |
| MPN | HT63N1200AKZ |
| LCSC Part # | C47326413 |
| Packaging | TO-247-4L |
| Customer # | |
| Key Attributes | Silicon Carbide Power MOSFET N-Channel Enhancement Mode |
| Datasheet |  HTCSEMI HT63N1200AKZ |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HTCSEMI | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 63A | |
| Output Capacitance(Coss) | 129pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 341W | |
| RDS(on) | 43mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.357nF | |
| Gate Charge(Qg) | 118nC | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
N-channel enhancement-mode power device based on 3rd generation SiC MOSFET technology, featuring an optimized package design with a dedicated drive source pin and 8mm creepage distance between drain and source. The device combines high blocking voltage with low on-resistance, along with high-speed switching performance and low capacitance. Its fast intrinsic diode exhibits low reverse recovery charge. Halogen-free and RoHS compliant.
Features
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated Kelvin source pin
- 8mm creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitance
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free and RoHS compliant
Applications
- Motor control
- Electric vehicle battery chargers
- High-voltage DC/DC converters
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 8.3791$ 5.8654 | $ 5.87 |
| 10+ | $ 7.2296$ 5.0608 | $ 50.61 |
| 30+ | $ 6.5287$ 4.5701 | $ 137.10 |
| 90+ | $ 5.9411$ 4.1588 | $ 374.29 |
Standard Packaging30/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HTCSEMI | |
| Packaging | TO-247-4L | |
| Drain to Source Voltage | 1.2kV | |
| Current - Continuous Drain(Id) | 63A | |
| Output Capacitance(Coss) | 129pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 341W | |
| RDS(on) | 43mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.357nF | |
| Gate Charge(Qg) | 118nC | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
N-channel enhancement-mode power device based on 3rd generation SiC MOSFET technology, featuring an optimized package design with a dedicated drive source pin and 8mm creepage distance between drain and source. The device combines high blocking voltage with low on-resistance, along with high-speed switching performance and low capacitance. Its fast intrinsic diode exhibits low reverse recovery charge. Halogen-free and RoHS compliant.
Features
- 3rd generation SiC MOSFET technology
- Optimized package with dedicated Kelvin source pin
- 8mm creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitance
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free and RoHS compliant
Applications
- Motor control
- Electric vehicle battery chargers
- High-voltage DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |