30% OFF
- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
HTCSEMI HT120N650ADZ
| Manufacturer | HTCSEMIAsian Brands |
| MPN | HT120N650ADZ |
| LCSC Part # | C47326411 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | Silicon Carbide Power MOSFET N-Channel Enhancement Mode |
| Datasheet |  HTCSEMI HT120N650ADZ |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HTCSEMI | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 120A | |
| Output Capacitance(Coss) | 289pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 416W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.011nF | |
| Gate Charge(Qg) | 188nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Electric vehicle charging
- Solar PV inverters
- Uninterruptible power supplies
- Switch-mode power supplies
- DC/DC converters
In-Stock: 25
25 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 9.9017$ 6.9312 | $ 6.93 |
| 10+ | $ 8.5437$ 5.9806 | $ 59.81 |
| 30+ | $ 7.7144$ 5.4001 | $ 162.00 |
| 90+ | $ 7.0211$ 4.9148 | $ 442.33 |
Standard Packaging30/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HTCSEMI | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 120A | |
| Output Capacitance(Coss) | 289pF | |
| Operating Temperature - | -40℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Pd - Power Dissipation | 416W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.011nF | |
| Gate Charge(Qg) | 188nC | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- 3rd generation SiC MOSFET technology
- High blocking voltage with low on-resistance
- Low capacitance for high-speed switching
- Fast intrinsic diode with low reverse recovery charge
- Halogen-free, RoHS compliant
Applications
AI Translation
- Electric vehicle charging
- Solar PV inverters
- Uninterruptible power supplies
- Switch-mode power supplies
- DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |