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HTCSEMI HT39N650AKZRoHS

Manufacturer
HTCSEMIAsian Brands
MPN
HT39N650AKZ
LCSC Part #
C47325509
Packaging
TO-247-4L
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Datasheetpdf iconHTCSEMI HT39N650AKZ
In-Stock: 10
10 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.1056$ 2.1740$ 2.17
10+$ 2.6558$ 1.8591$ 18.59
30+$ 2.388$ 1.6716$ 50.15
90+$ 2.1171$ 1.4820$ 133.38
510+$ 1.991$ 1.3937$ 710.79
990+$ 1.935$ 1.3545$ 1340.96
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHTCSEMI
PackagingTO-247-4L
Drain to Source Voltage650V
Current - Continuous Drain(Id)39A
Output Capacitance(Coss)80pF
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)79mΩ
Number1 N-channel
Input Capacitance(Ciss)1.02nF
Gate Charge(Qg)46nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • 3rd generation SiC MOSFET technology
  • High blocking voltage with low on-resistance
  • High-speed switching at low capacitance
  • Fast intrinsic diode with low reverse recovery charge
  • Halogen-free, RoHS compliant

Applications

AI Translation
  • Electric vehicle charging
  • Server power supplies
  • Solar PV inverters
  • Uninterruptible power supplies
  • DC-DC converters