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HTCSEMI HT36N900ADZRoHS

Manufacturer
HTCSEMIAsian Brands
MPN
HT36N900ADZ
LCSC Part #
C47325507
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Datasheetpdf iconHTCSEMI HT36N900ADZ
In-Stock: 30
30 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 5.9411$ 4.1588$ 4.16
10+$ 5.1269$ 3.5889$ 35.89
30+$ 4.6299$ 3.2410$ 97.23
90+$ 4.213$ 2.9491$ 265.42
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHTCSEMI
PackagingTO-247-3
Drain to Source Voltage900V
Current - Continuous Drain(Id)36A
Output Capacitance(Coss)66pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation125W
RDS(on)78mΩ
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)760pF
Gate Charge(Qg)33nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • C3M Silicon Carbide MOSFET Technology
  • High blocking voltage with low on-resistance
  • High-speed switching performance at low capacitance
  • Fast intrinsic diode with low reverse recovery charge Qrr
  • Halogen-free, RoHS compliant

Applications

AI Translation
  • Renewable energy
  • Electric vehicle battery chargers
  • High-voltage DC/DC converters
  • Switch-mode power supplies