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ST STGWA40H65DFBRoHS

Manufacturer
ST
MPN
STGWA40H65DFB
LCSC Part #
C472629
Packaging
TO-247
Customer #
Key Attributes
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Datasheetpdf iconST STGWA40H65DFB
In-Stock: 414
414 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.5397$ 2.54
10+$ 2.1501$ 21.50
30+$ 1.906$ 57.18
90+$ 1.657$ 149.13
510+$ 1.5439$ 787.39
1,200+$ 1.4954$ 1794.48
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-247
Td(off)142ns
Pd - Power Dissipation283W
Operating Temperature-55℃~+175℃
Td(on)40ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)107pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Vce Saturation(VCE(sat))2V@40A,15V
Reverse Recovery Time(trr)62ns
Switching Energy(Eoff)363uJ
Turn-On Energy (Eon)498uJ
Input Capacitance(Cies)5.412nF
Gate Charge(Qg)210nC@15V
Output Capacitance(Coes)198pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

AI Translation
  • Maximum junction temperature: T_J = 175 ℃
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: V_CE(sat) = 1.6 V (typ.) @ I_C = 40 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive V_CE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

Applications

AI Translation
  • Photovoltaic inverters
  • High frequency converters