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ST STP110N10F7RoHS

Manufacturer
ST
MPN
STP110N10F7
LCSC Part #
C472621
Packaging
TO-220
Customer #
Key Attributes
100V 110A 2.5V 150W 5.1mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconST STP110N10F7
In-Stock: 286
286 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1739$ 1.17
10+$ 0.9684$ 9.68
50+$ 0.8559$ 42.80
100+$ 0.7272$ 72.72
500+$ 0.6717$ 335.85
1,000+$ 0.6456$ 645.60
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.117nF
Gate Charge(Qg)72nC@50V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices feature ST's proprietary STripFET™ technology seventh-generation design rules with a new gate structure. The resulting power MOSFETs deliver ultra-low on-state resistance R<sub>DS(on)</sub> across all package types.

Features

AI Translation
  • Ultra-low on-resistance
  • 100% avalanche tested

Applications

AI Translation
  • Switching applications