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ST STP24N60DM2
| Manufacturer | |
| MPN | STP24N60DM2 |
| LCSC Part # | C472620 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 18A TO-220 |
| Datasheet |  ST STP24N60DM2 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.055nF | |
| Gate Charge(Qg) | 29nC@480V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These FDmesh II Plus low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Features
- Extremely low gate charge and input capacitance
- Lower RDS(on) X area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
Applications
- Switching applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6102 | $ 1.61 |
| 10+ | $ 1.3676 | $ 13.68 |
| 30+ | $ 1.2146 | $ 36.44 |
| 100+ | $ 1.0583 | $ 105.83 |
| 500+ | $ 0.9883 | $ 494.15 |
| 1,000+ | $ 0.9574 | $ 957.40 |
Standard Packaging50/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.055nF | |
| Gate Charge(Qg) | 29nC@480V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These FDmesh II Plus low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Features
- Extremely low gate charge and input capacitance
- Lower RDS(on) X area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
Applications
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |