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ST STGWA60H65DFBRoHS

Manufacturer
ST
MPN
STGWA60H65DFB
LCSC Part #
C472600
Packaging
TO-247
Customer #
Key Attributes
IGBT 650V 80A TO-247
Datasheetpdf iconST STGWA60H65DFB
In-Stock: 203
203 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.4111$ 2.8654$ 2.87
10+$ 3.2312$ 2.7143$ 27.14
30+$ 3.1259$ 2.6258$ 78.77
100+$ 3.0173$ 2.5346$ 253.46
500+$ 2.9671$ 2.4924$ 1246.20
1,000+$ 2.946$ 2.4747$ 2474.70
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-247
Td(off)210ns
Pd - Power Dissipation375W
Operating Temperature-55℃~+175℃@(Tj)
Td(on)66ns
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@1mA
Vce Saturation(VCE(sat))1.6V@60A,15V
Reverse Recovery Time(trr)60ns
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)1.59mJ
Input Capacitance(Cies)7.792nF@25V
Gate Charge(Qg)306nC@60A,0~15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Applications

AI Translation
  • Photovoltaic inverters
  • High-frequency converters