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ST STP24N60M2RoHS

Manufacturer
ST
MPN
STP24N60M2
LCSC Part #
C472597
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 650V 18A TO-220
Datasheetpdf iconST STP24N60M2
In-Stock: 44
44 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9773$ 0.98
10+$ 0.9546$ 9.55
30+$ 0.9399$ 28.20
100+$ 0.9237$ 92.37
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-220
Drain to Source Voltage650V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.06nF
Gate Charge(Qg)29nC@480V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Lower RDS(on) X area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications