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ST STD4N80K5RoHS

Manufacturer
ST
MPN
STD4N80K5
LCSC Part #
C472540
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 800V 3A TO-252(DPAK)
Datasheetpdf iconST STD4N80K5
In-Stock: 178
178 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.8046$ 1.80
10+$ 1.5422$ 15.42
30+$ 1.379$ 41.37
100+$ 1.2111$ 121.11
500+$ 1.1343$ 567.15
1,000+$ 1.1023$ 1102.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Drain to Source Voltage800V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)175pF
Gate Charge(Qg)10.5nC@640V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

AI Translation
  • Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested Zener-protected

Applications

AI Translation
  • Switching applications