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ST STB55NF06T4
| Manufacturer | |
| MPN | STB55NF06T4 |
| LCSC Part # | C472532 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 50A D2PAK |
| Datasheet | ST STB55NF06T4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- Refer to soa for the max allowable current value on FP-type due to Rth value
- 100% avalanche tested
- Exceptional dv/dt capability
Applications
AI Translation
- Switching application
In-Stock: 144
144 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5906 | $ 1.59 |
| 10+ | $ 1.4151 | $ 14.15 |
| 30+ | $ 1.3176 | $ 39.53 |
| 100+ | $ 1.2088 | $ 120.88 |
| 500+ | $ 1.1617 | $ 580.85 |
| 1,000+ | $ 1.1389 | $ 1138.90 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 18mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.3nF | |
| Gate Charge(Qg) | 60nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- Refer to soa for the max allowable current value on FP-type due to Rth value
- 100% avalanche tested
- Exceptional dv/dt capability
Applications
AI Translation
- Switching application
C472532 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HT55NF06ASZ | HTCSEMI | TO-263-3 | 180 | $0.1971 $0.3942 | ||
| HB3510P | HL(Haolin Elec) | TO-263 | 15 | $ 0.3173 | ||
| IRFZ44ESTRLPBF | Infineon | D2PAK(TO-263) | 743 | $ 2.0276 | ||
| HT65NF06ASZ | HTCSEMI | TO-263 | 12 | $0.3172 $0.6343 | ||
| BJ50NG | DOINGTER | TO-263 | 92 | $ 0.7003 | ||
| STB60NF06T4 | ST | D2PAK(TO-263) | 0 | $ 4.0129 | ||
| IRFZ44ESPBF | Infineon | D2PAK | 0 | $ 0.9397 | ||
| IRFZ44ESTRRPBF | Infineon | D2PAK | 0 | $ 1.0797 | ||
| PSMN017-80BS,118 | Nexperia | D2PAK | 0 | $ 0.3368 | ||
| AUIRF1018ESTRL | Infineon | D2PAK | 0 | $ 3.3664 |