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DOINGTER DOZ30N10RoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ30N10
LCSC Part #
C47018566
Packaging
DFN3x3-8
Customer #
Key Attributes
MOSFET N-CH 100V 30A DFN3x3-8
Datasheetpdf iconDOINGTER DOZ30N10
In-Stock: 195
195 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 5Multiple: 5Sales Unit: Piece
QtyUnit PriceTotal Amount
5+$ 0.1846$ 0.92
50+$ 0.1485$ 7.43
150+$ 0.133$ 19.95
500+$ 0.1137$ 56.85
2,500+$ 0.1051$ 262.75
5,000+$ 0.1$ 500.00
Standard Packaging5000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8
Drain to Source Voltage100V
Output Capacitance(Coss)517pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)16.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)918pF
Gate Charge(Qg)13nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance RDS(on) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100 V, ID = 30 A, RDS(ON) < 16.5 mΩ at VGS = 10 V (typical: 15 mΩ)
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell-density trench technology for ultra-low RDS(ON)
  • Excellent package thermal dissipation