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DOINGTER DOZ4604ARoHS

Manufacturer
DOINGTERAsian Brands
MPN
DOZ4604A
LCSC Part #
C47018562
Packaging
DFN3x3-8D
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 20A DFN3x3-8D
Datasheetpdf iconDOINGTER DOZ4604A
In-Stock: 1,080
1,080 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.0923$ 0.46
50+$ 0.0747$ 3.74
150+$ 0.0659$ 9.89
500+$ 0.0593$ 29.65
2,500+$ 0.054$ 135.00
5,000+$ 0.0513$ 256.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN3x3-8D
Drain to Source Voltage20V
Output Capacitance(Coss)138.6pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation20.8W
Reverse Transfer Capacitance (Crss@Vds)108.1pF
RDS(on)20mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)788.5pF
Gate Charge(Qg)9.45nC@4.5V
TypeN-Channel + P-Channel
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Introduction

AI Translation

This N+P channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • N-Channel: VDS = 20 V, ID = 20 A, RDS(ON) < 20 mΩ at VGS = 4.5 V
  • P-Channel: VDS = -20 V, ID = -18 A, RDS(ON) < 35 mΩ at VGS = -4.5 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • Excellent package with superior thermal performance