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TI TPD4E110DPWRRoHS

Manufacturer
MPN
TPD4E110DPWR
LCSC Part #
C469885
Packaging
X2-SON-4-EP(0.8x0.8)
Customer #
Key Attributes
ESD DIODE 5.5VWM 13VC X2-SON-4-EP(0.8x0.8)
Datasheetpdf iconTI TPD4E110DPWR
In-Stock: 40
40 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1514$ 0.76
50+$ 0.1483$ 7.42
150+$ 0.1462$ 21.93
500+$ 0.1441$ 72.05
Standard Packaging3000/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerTI
PackagingX2-SON-4-EP(0.8x0.8)
Clamping Voltage13V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)2.5A@8/20us
Peak Pulse Power Dissipation (Ppp)35W@8/20us
Voltage - Breakdown7.5V
Number of ChannelsFour channels
typeESD
PolarityUnidirectional
Reverse Leakage Current (Ir)1nA
Reverse Stand-Off Voltage (Vrwm)5.5V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The TPD4E110 is a uni-directional Electrostatic Discharge (ESD) protection device with ultra-low capacitance. The device is constructed with a central ESD clamp and features two hiding diodes per channel to reduce the capacitive loading. Each channel is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110's ultra-low loading capacitance makes the device ideal for protecting high-speed signal pins.

Features

AI Translation
  • Provides System Level ESD Protection for Low Voltage IO Interface
  • IO Capacitance 0.45pF (Typ)
  • IEC 61000-4-2 Level 4
    • ±12kV (Contact Discharge)
    • ±15kV (Air Gap Discharge)
  • IEC61000-4-5 (Surge): 2.5A (8/20 μs)
  • DC Breakdown Voltage 6.5V (Min)
  • Ultra Low Leakage Current 1nA (Max)
  • Low ESD Clamping Voltage
  • Industrial Temperature Range: -40°C to 125°C
  • Space Minimizing 0.8mm×0.8mm DPW Package

Applications

AI Translation
  • USB 3.0
  • HDMI 2.0
  • LVDS
  • DisplayPort
  • PCI Express eSata Interfaces