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GOODWORK FDN304P-GK product image
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GOODWORK FDN304P-GKRoHS

Manufacturer
GOODWORKAsian Brands
MPN
FDN304P-GK
LCSC Part #
C46962147
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 4.1A SOT-23
Datasheetpdf iconGOODWORK FDN304P-GK
In-Stock: 4,900
4,900 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0383$ 0.77
200+$ 0.0305$ 6.10
600+$ 0.0266$ 15.96
3,000+$ 0.0237$ 71.10
9,000+$ 0.0214$ 192.60
30,000+$ 0.0202$ 606.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerGOODWORK
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)4.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.31W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)33mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)830pF
Gate Charge(Qg)8.8nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDN304P is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. The FDN304P complies with RoHS standards and green product requirements, and has passed full-function reliability qualification.

  • Ultra-low gate charge
  • Green/halogen-free device available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology

Features

AI Translation
  • Ultra-low gate charge
  • RoHS-compliant green devices available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology