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VISHAY SI7852DP-T1-GE3 product image
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VISHAY SI7852DP-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SI7852DP-T1-GE3
LCSC Part #
C467914
Packaging
PowerPAKSO-8
Customer #
Key Attributes
MOSFET N-CH 80V 7.6A PowerPAKSO-8
Datasheetpdf iconVISHAY SI7852DP-T1-GE3
In-Stock: 596
596 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.6465$ 1.65
10+$ 1.5281$ 15.28
30+$ 1.4551$ 43.65
100+$ 1.3804$ 138.04
500+$ 1.3464$ 673.20
1,000+$ 1.3302$ 1330.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAKSO-8
Drain to Source Voltage80V
Current - Continuous Drain(Id)7.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.9W
RDS(on)16.5mΩ@10V
Number1 N-channel
Gate Charge(Qg)34nC@10V
TypeN-Channel
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Features

AI Translation
  • TrenchFET power MOSFETs
  • New low thermal resistance PowerPAK package with low 1.07 mm profile
  • PWM optimized for fast switching
  • 100 % Rg tested
  • RoHS COMPLIANT HALOGEN FREE Available

Applications

AI Translation
  • Primary side switch for DC/DC applications