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onsemi FDT457N
| Manufacturer | |
| MPN | FDT457N |
| LCSC Part # | C467786 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5A SOT-223 |
| Datasheet |  onsemi FDT457N |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 43mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 4.2nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor
Features
- These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
- This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.
- 5 A, 30 V. RDS(ON)=0.06 Ω @ VGS=10 V, RDS(ON)=0.090 Ω @ VGS=4.5 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Applications
- notebook computer power management
- battery powered circuits
- DC motor
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0447 | $ 1.04 |
| 10+ | $ 0.8542 | $ 8.54 |
| 30+ | $ 0.7508 | $ 22.52 |
| 100+ | $ 0.633 | $ 63.30 |
| 500+ | $ 0.5813 | $ 290.65 |
| 1,000+ | $ 0.5571 | $ 557.10 |
Standard Packaging4000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -65℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 43mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 235pF | |
| Gate Charge(Qg) | 4.2nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor
Features
- These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
- This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.
- 5 A, 30 V. RDS(ON)=0.06 Ω @ VGS=10 V, RDS(ON)=0.090 Ω @ VGS=4.5 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Applications
- notebook computer power management
- battery powered circuits
- DC motor
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |