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onsemi FDS6673BZRoHS

Manufacturer
onsemi
MPN
FDS6673BZ
LCSC Part #
C467780
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 30V 14.5A SO-8
Datasheetpdf icononsemi FDS6673BZ
In-Stock: 2,513
2,513 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2131$ 1.21
10+$ 0.9708$ 9.71
30+$ 0.8505$ 25.52
100+$ 0.7302$ 73.02
500+$ 0.6586$ 329.30
1,000+$ 0.6212$ 621.20
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)14.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)7.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.7nF
Gate Charge(Qg)124nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

AI Translation
  • Max rDS(on)=7.8mΩ, VGS=-10V, ID=-14.5A
  • Max rDS(on)=12mΩ, VGS=-4.5V, lD=-12A
  • Extended VGS range (-25V) for battery applications
  • HBM ESD protection level of 6.5KV typical
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant

Applications

AI Translation
  • Power Management
  • load switching applications in Notebook Computers
  • load switching applications in Portable Battery Packs