HXY MOSFET NTE2428-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | NTE2428-HXY |
| LCSC Part # | C46682464 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | TRANS 80V 1A SOT-89 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 390 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 390 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High voltage: VCEO = 80 V
- High Breakdown Voltage and Current
- Excellent DC Current Gain Linearity
- Low Collector-Emitter Saturation Voltage
In-Stock: 96
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.6526 | $ 1.65 |
| 10+ | $ 1.3912 | $ 13.91 |
| 30+ | $ 1.2484 | $ 37.45 |
| 100+ | $ 1.0861 | $ 108.61 |
| 500+ | $ 1.0146 | $ 507.30 |
| 1,000+ | $ 0.9805 | $ 980.50 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 390 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| DC Current Gain | 390 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 1A | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 400mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- High voltage: VCEO = 80 V
- High Breakdown Voltage and Current
- Excellent DC Current Gain Linearity
- Low Collector-Emitter Saturation Voltage
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



