HXY MOSFET KSP2222ABU-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | KSP2222ABU-HXY |
| LCSC Part # | C46682422 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | TRANS 40V 0.6A TO-92 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Collector Current: IC = 0.6 A
- Power Dissipation of 625mW
In-Stock: 60
60 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0961 | $ 0.48 |
| 50+ | $ 0.0774 | $ 3.87 |
| 150+ | $ 0.0681 | $ 10.22 |
| 1,000+ | $ 0.0611 | $ 61.10 |
| 2,000+ | $ 0.0555 | $ 111.00 |
| 5,000+ | $ 0.0526 | $ 263.00 |
Standard Packaging1000/Full Bag | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 10nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 600mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Collector Current: IC = 0.6 A
- Power Dissipation of 625mW
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



