HXY MOSFET 2N5550TFR-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | 2N5550TFR-HXY |
| LCSC Part # | C46682406 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | TRANS 160V 0.6A TO-92 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
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Features
AI Translation
- General Purpose Switching Application
In-Stock: 1,110
1,110 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0681 | $ 0.68 |
| 100+ | $ 0.0549 | $ 5.49 |
| 300+ | $ 0.0482 | $ 14.46 |
| 1,000+ | $ 0.0433 | $ 43.30 |
| 5,000+ | $ 0.0393 | $ 196.50 |
| 10,000+ | $ 0.0373 | $ 373.00 |
Standard Packaging1000/Full Bag | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 200 | |
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-92 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 200 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Pd - Power Dissipation | 625mW | |
| Current - Collector(Ic) | 600mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- General Purpose Switching Application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



