HXY MOSFET DXT5551-13-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | DXT5551-13-HXY |
| LCSC Part # | C46682399 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | TRANS 160V 0.6A SOT-89 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
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Features
AI Translation
- Switching and amplification in high-voltage applications (e.g., telephone communications)
- Low current (600mA max)
- High voltage (180V max)
In-Stock: 230
230 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0902 | $ 0.45 |
| 50+ | $ 0.0718 | $ 3.59 |
| 150+ | $ 0.0627 | $ 9.41 |
| 1,000+ | $ 0.0558 | $ 55.80 |
| 2,000+ | $ 0.0503 | $ 100.60 |
| 5,000+ | $ 0.0475 | $ 237.50 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-89 | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 160V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 600mA | |
| Pd - Power Dissipation | 500mW | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Switching and amplification in high-voltage applications (e.g., telephone communications)
- Low current (600mA max)
- High voltage (180V max)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



