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onsemi FDPC5018SGRoHS

Manufacturer
onsemi
MPN
FDPC5018SG
LCSC Part #
C464164
Packaging
PQFN-8-EP(5x6)
Customer #
Key Attributes
MOSFET N-CH ARR 30V 17A 32A PQFN-8-EP(5x6)
Datasheetpdf icononsemi FDPC5018SG
In-Stock: 2,715
2,715 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.0795$ 1.08
10+$ 0.876$ 8.76
30+$ 0.775$ 23.25
100+$ 0.6464$ 64.64
500+$ 0.5862$ 293.10
1,000+$ 0.5552$ 555.20
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingPQFN-8-EP(5x6)
ConfigurationCommon source;Common Drain
Current - Continuous Drain(Id)17A;32A
Pd - Power Dissipation2.1W;2.3W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)42pF;80pF
Number2 N-Channel
Input Capacitance(Ciss)1.224nF;4.593nF
Gate Charge(Qg)24nC@10V;87nC@10V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

Features

AI Translation
  • Q1: N-Channel
  • Max rDS(on)=5.0 mΩ at VGS=10 V, ID=17 A
  • Max rDS(on)=6.5 mΩ at VGS=4.5 V, ID=14 A
  • Q2: N-Channel
  • Max rDS(on)=1.6 mΩ at VGS=10 V, ID=32 A
  • Max rDS(on)=2.0 mΩ at VGS=4.5 V, ID=28 A
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
  • RoHS Compliant

Applications

AI Translation
  • Computing
  • Communications
  • General Purpose Point of Load