LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi FDMC8622 product image
  • FDMC8622 thumbnail 1
  • FDMC8622 thumbnail 2
  • FDMC8622 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FDMC8622RoHS

Manufacturer
MPN
FDMC8622
LCSC Part #
C463717
Packaging
Power33-8
Customer #
Key Attributes
MOSFET 100V 16A Power33-8
Datasheetpdf icononsemi FDMC8622
In-Stock: 104
104 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.5801$ 1.58
10+$ 1.3046$ 13.05
30+$ 1.1313$ 33.94
100+$ 0.9549$ 95.49
500+$ 0.9487$ 474.35
1,000+$ 0.9131$ 913.10
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower33-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)56mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)402pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized for on-resistance R<sub>DS(ON)</sub>, switching performance, and ruggedness.

Features

AI Translation
  • Shield Gate MOSFET technology
  • Maximum on-resistance rDS(on) = 56 mΩ at VGS = 10 V, ID = 4 A
  • Maximum on-resistance rDS(on) = 90 mΩ at VGS = 6 V, ID = 3 A
  • High-performance trench technology for ultra-low RDS(ON)
  • Industry-standard SMT package with high power and high current handling capability
  • 100% UIL tested
  • Lead-free, RoHS compliant

Applications

AI Translation
  • DC-DC main switch