onsemi FDMC8622
| Manufacturer | |
| MPN | FDMC8622 |
| LCSC Part # | C463717 |
| Packaging | Power33-8 |
| Customer # | |
| Key Attributes | MOSFET 100V 16A Power33-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 16A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 402pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized for on-resistance R<sub>DS(ON)</sub>, switching performance, and ruggedness.
Features
AI Translation
- Shield Gate MOSFET technology
- Maximum on-resistance rDS(on) = 56 mΩ at VGS = 10 V, ID = 4 A
- Maximum on-resistance rDS(on) = 90 mΩ at VGS = 6 V, ID = 3 A
- High-performance trench technology for ultra-low RDS(ON)
- Industry-standard SMT package with high power and high current handling capability
- 100% UIL tested
- Lead-free, RoHS compliant
Applications
AI Translation
- DC-DC main switch
In-Stock: 104
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5801 | $ 1.58 |
| 10+ | $ 1.3046 | $ 13.05 |
| 30+ | $ 1.1313 | $ 33.94 |
| 100+ | $ 0.9549 | $ 95.49 |
| 500+ | $ 0.9487 | $ 474.35 |
| 1,000+ | $ 0.9131 | $ 913.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | Power33-8 | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 16A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 31W | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| RDS(on) | 56mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 402pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized for on-resistance R<sub>DS(ON)</sub>, switching performance, and ruggedness.
Features
AI Translation
- Shield Gate MOSFET technology
- Maximum on-resistance rDS(on) = 56 mΩ at VGS = 10 V, ID = 4 A
- Maximum on-resistance rDS(on) = 90 mΩ at VGS = 6 V, ID = 3 A
- High-performance trench technology for ultra-low RDS(ON)
- Industry-standard SMT package with high power and high current handling capability
- 100% UIL tested
- Lead-free, RoHS compliant
Applications
AI Translation
- DC-DC main switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



