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onsemi FDD86250RoHS

Manufacturer
onsemi
MPN
FDD86250
LCSC Part #
C463461
Packaging
TO-252
Customer #
Key Attributes
150V 51A 2V 132W 31mΩ@6V 1 N-channel TO-252 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDD86250
In-Stock: 5,220
5,220 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0994$ 1.10
10+$ 0.9055$ 9.06
30+$ 0.7997$ 23.99
100+$ 0.6792$ 67.92
500+$ 0.6271$ 313.55
1,000+$ 0.6026$ 602.60
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252
Drain to Source Voltage150V
Current - Continuous Drain(Id)51A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation132W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)31mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.11nF
Gate Charge(Qg)33nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using an advanced PowerTrench process with integrated shield gate technology. The process has been optimized for on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Shielded Gate MOSFET technology
  • Maximum rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
  • Maximum rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
  • 100% UIL tested
  • RoHS compliant

Applications

AI Translation
  • DC-DC conversion